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HY3506W

HOOYI
Part Number HY3506W
Manufacturer HOOYI
Description N-Channel Enhancement Mode MOSFET
Published Oct 10, 2014
Detailed Description HY3506P/W N-Channel Enhancement Mode MOSFET Features • • • • 60V/190A RDS(ON) = 3.0 mΩ (typ.) @ VGS=10V Pin Descriptio...
Datasheet PDF File HY3506W PDF File

HY3506W
HY3506W

Overview
HY3506P/W N-Channel Enhancement Mode MOSFET Features • • • • 60V/190A RDS(ON) = 3.
0 mΩ (typ.
) @ VGS=10V Pin Description 100% avalanche tested Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) G D G S D S TO-220 D TO-247 Applications • • Switching application Power Management for Inverter Systems.
S G N-Channel MOSFET Ordering and Marking Information Package Code ÿ YYXXXJWW G P HY3506 ÿ YYXXXJWW G W HY3506 P : TO220-3L Date Code YYXXX WW Assembly Material G : Lead Free Device W : TO247-3L Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS.
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