Dual N-Channel Enhancement Mode Field Effect Transistor
Description
Gre r e Prod
STF2456
Ver 1.0
S a mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS ID R DS(ON) (m Ω) Max
18.5 @ VGS=4.5V 20.0 @ VGS=4.0V 24V 7.0A 20.5 @ VGS=3.7V 22.5 @ VGS=3.1V 28.0 @ VGS=2.5V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Pr...
SamHop Microelectronics
STF2456 PDF File
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