5V 4M x 4 CMOS DRAM
Description
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5V 4M×4 CMOS DRAM (Fast Page mode)
AS4C4M4F0 AS4C4M4F1
Features
Organization: 4,194,304 words × 4 bits High speed
- 50/60 ns RAS access time - 25/30 ns column address access time - 12/15 ns CAS access time Low power consumption - Active: 908 mW max - Standby: 5.5 mW max, CMOS I/O Fast page mode Refresh - 4096 refresh cycles, 64 ms refresh inter...
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