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IPB80N06S2-09

Infineon Technologies
Part Number IPB80N06S2-09
Manufacturer Infineon Technologies
Description Power-Transistor
Published Dec 2, 2014
Detailed Description OptiMOS® Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C pea...
Datasheet PDF File IPB80N06S2-09 PDF File

IPB80N06S2-09
IPB80N06S2-09


Overview
OptiMOS® Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested IPB80N06S2-09 IPP80N06S2-09 Product Summary V DS R DS(on),max (SMD version) ID 55 V 8.
8 mΩ 80 A PG-TO263-3-2 PG-TO220-3-1 Type IPB80N06S2-09 IPP80N06S2-09 Package PG-TO263-3-2 PG-TO220-3-1 Ordering Code Marking SP0002-18741 2N0609 SP0002-18740 2N0609 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) I D,pulse T C=25...



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