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GT50J102

Toshiba Semiconductor
Part Number GT50J102
Manufacturer Toshiba Semiconductor
Description silicon N-channel IGBT
Published Mar 23, 2005
Detailed Description GT50J102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J102 HIGH POWER SWITCHING APPLICATIONS MO...
Datasheet PDF File GT50J102 PDF File

GT50J102
GT50J102

Overview
GT50J102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J102 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm z Third-generation IGBT z Enhancement mode type z High speed.
: tf = 0.
30μs (Max.
) z Low saturation voltage.
: VCE(sat) = 2.
7V (Max.
) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector−Emitter Voltage Gate−Emitter Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range Screw Torque DC 1ms VCES VGES IC ICP PC Tj Tstg ― 600 ±20 50 100 200 150 −55~150 0.
8 V V A W °C °C N･m JEDEC ⎯ JEITA ⎯ TOSHIBA 2-21F2C Weight: 9.
75 g (typ.
) Note: Using continuo...


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