GT50J301
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
GT50J301
HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
Unit: mm
z Third generation IGBT
z Enhancement mode type
z High speed
: tf = 0.30μs (Max.)
z Low saturation voltage : VCE (sat) = 2.7V (Max.)
z FRD included between emitter and collector
ABSOLUTE MAXIMUM RAT...
