GP201MHS18
GP201MHS18
Low VCE(SAT) Half Bridge IGBT Module
DS5290-2.1 January 2001
FEATURES
s s s s s
Low VCE(SAT) Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 200A Per Arm
KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK)
1800V 2.6V 200A 400A
APPLICATIONS
s s s s
11(C2) 1(E1C2) 2(E2)
6(G2) 7(E2) 3(C...
