Low VCE(SAT) Dual Switch IGBT Module Preliminary Information
Description
GP401DDS18
GP401DDS18
Low VCE(SAT) Dual Switch IGBT Module Preliminary Information
DS5272-3.0 January 2001
FEATURES
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Low VCE(SAT) Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction
KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK)
1800V 2.6V 400A 800A
APPLICATIONS
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High Reliability Inverters M...
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