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IXTC200N085T

IXYS Corporation
Part Number IXTC200N085T
Manufacturer IXYS Corporation
Description Power MOSFET
Published Feb 13, 2015
Detailed Description Preliminary Technical Information TrenchMVTM IXTC200N085T Power MOSFET (Electrically Isolated Back Surface) N-Chann...
Datasheet PDF File IXTC200N085T PDF File

IXTC200N085T
IXTC200N085T

Overview
Preliminary Technical Information TrenchMVTM IXTC200N085T Power MOSFET (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated V= DSS ID25 = RDS(on) ≤ 85 110 5.
5 V A mΩ Symbol VDSS VDGR VGSM ID25 I LRMS IDM IAR EAS dv/dt P D TJ TJM Tstg TL T SOLD V ISOL FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient Maximum Ratings 85 V 85 V ± 20 V TC = 25°C Package Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C 110 A 75 A 600 A 25 A 1.
0 J IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS T J ≤ 175°C, R G = 3.
3 Ω T C = 25°C 3 V/ns 150 -55 .
.
.
+175 175 -55 .
.
.
+175 W °C °C °C 1.
6 mm (0.
062 in.
) from case for 10 s Plastic body for 10 seconds 50/60 Hz, t = 1 minute, I < 1 mA, RMS ISOL 300 260 2500 °C °C V Mounting force 11.
.
65/2.
5.
.
15 N/lb.
2g Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 μA VGS(th) VDS = VGS, ID = 250 μA I GSS V GS = ± 20 V, V DS = 0 V IDSS VDS = VDSS VGS = 0 V TJ = 150°C R DS(on) V = 10 V, I = 25 A, Notes 1, 2 GS D Characteristic Values Min.
Typ.
Max.
75 V 2.
0 4.
0 V ± 200 nA 5 μA 250 μA 5.
5 m Ω ISOPLUS220 (IXTC) E153432 G DS G = Gate S = Source Isolated back surface D = Drain Features Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - 42V Power Bus - ABS Systems DC/DC Converters and Off-line UPS Primary Switch for 24V and 48V Systems High Current Switching Applications © 2007 IXYS CORPORATION All rights reserved DS99644 (02/07) Symbol g fs Ciss Coss Crss td(on) tr td(off) tf Q g(on) Q gs Q gd RthJC RthCS IXTC200N085T Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) Min.
Typ.
Max.
V = 10 V; I = 60 A, Note 1 DS D 75 120 S VGS = 0 V, VDS = 25 V, f = 1 MHz ...


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