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FXT605

ETC
Part Number FXT605
Manufacturer ETC
Description NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR
Published Mar 23, 2005
Detailed Description NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR ISSUE 1 – SEPT 93 FEATURES * 120 Volt VCEO * Gain of 2K at IC=1 Am...
Datasheet PDF File FXT605 PDF File

FXT605
FXT605

Overview
NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR ISSUE 1 – SEPT 93 FEATURES * 120 Volt VCEO * Gain of 2K at IC=1 Amp * Ptot= 1 Watt APPLICATIONS * Lamp, solenoid and relay drivers * Replacement of TO126 and TO220 packages REFER TO ZTX605 FOR GRAPHS FXT605 B C E ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb = 25°C Operating and Storage Temperature Range PARAMETER SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO MIN.
140 120 10 0.
01 10 0.
1 10 1.
0 1.
5 1.
8 1.
7 2000 5000 2000 500 150 SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg TYP.
MAX.
E-Line TO92 Compatible VALUE 140 120 10 4 1 1 -55 to +200 UNIT CONDITIONS.
UNIT V V V A A W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Colllector-Emitter Cut-Off Current Coll...


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