IRGS6B60KD
Description
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coefficient.
Benefits
Benchmark Efficiency for Motor Control.
Rugged Transient...
International Rectifier
S6B60KD PDF File
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