NTD4856N, NVD4856N
Power MOSFET
25 V, 89 A, Single N−Channel, DPAK/IPAK
Features
Trench Technology Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses NVD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101 Q...
