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HX8205

Dual N-Channel Enhancement Mode Power MOSFET

Description

HX8205 Dual N-Channel Enhancement Mode Power MOSFET Description The HX8205 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 19.5V,ID = 4A RDS(ON) <37mΩ @ VGS=2.5V R...

Husintent

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