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HX8205A

Dual N-Channel Enhancement Mode Power MOSFET

Description

HX8205A Dual N-Channel Enhancement Mode Power MOSFET Description The HX8205A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 19.5V,ID = 6A RDS(ON) <37mΩ @ VGS=2.5V...

Husintent

HX8205A PDF File

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HX8205 Dual N-Channel Enhancement Mode Power MOSFET - Husintent
HX8205A Dual N-Channel Enhancement Mode Power MOSFET - Husintent

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