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D1416

Silicon NPN Darlington Power Transistor

Description

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD1416 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain : hFE= 2000(Min) @ IC= 3A, VCE= 3V ·Complement to Type 2SB1021 APPLICATIONS ·Hammer driver,pul...

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