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2SB1386

SeCoS
Part Number 2SB1386
Manufacturer SeCoS
Description PNP Silicon Low Frequency Transistor
Published Apr 25, 2015
Detailed Description Elektronische Bauelemente 2SB1386 -5A, -30V PNP Silicon Low Frequency Transistor RoHS Compliant Product A suffix of “-...
Datasheet PDF File 2SB1386 PDF File

2SB1386
2SB1386

Overview
Elektronische Bauelemente 2SB1386 -5A, -30V PNP Silicon Low Frequency Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Low VCE(sat) Excellent DC current gain characteristics Complements the 2SD2098 CLASSIFICATION OF hFE Product-Rank 2SB1386-P Range 82~180 Marking BHP 2SB1386-Q 120~270 BHQ 2SB1386-R 180~390 BHR SOT-89 123 A EC 4 B F G H J D K L PACKAGE INFORMATION Package MPQ SOT-89 1K LeaderSize 7’ inch REF.
A B C D E F Millimeter Min.
Max.
4.
40 3.
94 4.
60 4.
25 1.
40 1.
60 2.
30 2.
60 1.
50 1.
70 0.
89 1.
2 0 REF.
G H J K L Millimeter Min.
Max.
0.
40 0.
58 1.
50 TYP 3.
00 TYP 0.
32 0.
52 0.
35 0.
44 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Symbol VCBO VCEO VEBO IC Collector Power Dissipation PD Junction & Storage Temperature TJ, TSTG Note: (1) Single pulse, Pw=10ms.
(2) When mounted on a 40⋅40⋅0.
7 mm ceramic board.
Ratings -30 -20 -6 -5 -10 0.
5 2 150, -55~150 Unit V V V A(DC) A(Pulse) (1) W (2) °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain * Transition frequency Output Capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) hFE fT COB Min.
-30 -20 -6 82 - Typ.
120 60 Max.
-0.
5 -0.
5 -1.
0 390 - Unit V V V μA μA V MHz pF Test Conditions IC=-50µA IC= -1mA IE= -50µA VCB= -20V VEB= -5V IC/IB= -4A/-0.
1A VCE= -2V, IC= -0.
5A VCE= -6V, IE= -50mA, f=30MHz VCB= -20V, IE=0, f=1MHz * * ∗Measured using pulse current.
http://www.
SeCoSGmbH.
com/ 10-Dec-2010 Rev.
B Any changes of specification will not be informed individually.
Page 1 of 3 Elektronische Bauelemente CHARACTERISTIC CURVES 2SB1386 -5A, -30V PNP Silicon Low Frequency Tra...


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