INSULATED GATE BIPOLAR TRANSISTOR
Description
PD - 96197
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
Low VCE (ON) Trench IGBT Technology Low switching losses
Maximum Junction temperature 175 °C
5 µS short circuit SOA Square RBSOA
100% of the parts tested for 4X rated current (ILM) Positive VCE (ON) Temperature co-efficient Ultra fast soft Recovery Co-P...
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