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A1430

Toshiba Semiconductor
Part Number A1430
Manufacturer Toshiba Semiconductor
Description 2SA1430
Published May 10, 2015
Detailed Description TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1430 Strobe Flash Applications Medium Power Amplifier App...
Datasheet PDF File A1430 PDF File

A1430
A1430

Overview
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1430 Strobe Flash Applications Medium Power Amplifier Applications 2SA1430 Unit: mm • High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.
5 A) : hFE (2) = 60 (min), 120 (typ.
) (VCE = −1 V, IC = −4 A) • Low saturation voltage: VCE (sat) = −0.
5 V (max) (IC = −2 A, IB = −50 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage DC Collector current Pulsed (Note 1) Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCES VCEO VEBO IC ICP IB PC T...


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