2SA1431
Description
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1431
Strobe Flash Applications Medium Power Amplifier Applications
2SA1431
Unit: mm
High DC current gain and excellent hFE linearity : hFE(1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) : hFE(2) = 70 (min) (VCE = −2 V, IC = −4 A)
Low saturation voltage: VCE (sat) = −1.0 V (max) (IC = −4 A, IB = ...
Toshiba Semiconductor
A1431 PDF File
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