DatasheetsPDF.com

IPG16N10S4-61

Infineon Technologies
Part Number IPG16N10S4-61
Manufacturer Infineon Technologies
Description Power-Transistor
Published May 30, 2015
Detailed Description IPG16N10S4-61 OptiMOS™-T2 Power-Transistor Features • Dual N-channel Normal Level - Enhancement mode • AEC Q101 qualifi...
Datasheet PDF File IPG16N10S4-61 PDF File

IPG16N10S4-61
IPG16N10S4-61


Overview
IPG16N10S4-61 OptiMOS™-T2 Power-Transistor Features • Dual N-channel Normal Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Product Summary V DS R 3) DS(on),max ID 100 V 61 mW 16 A PG-TDSON-8-4 Type IPG16N10S4-61 Package Marking PG-TDSON-8-4 4N1061 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current one channel active I D T C=25 °C, V GS=10 V Pulsed drain current1) one channel active Avalanche energy, single pulse1, 3) Avalanche current, single pulse3) Gate source voltage Power dissipation one channel active T C=100 °C, V GS=10 V1) I D,pulse - E AS I AS V GS I D=8A - P tot T C=25 °C Operating and storage temperature T j, T stg - Value 16 11 64 33 10 ±20 29 -55 .
.
.
+175 Unit A mJ A V W °C Rev.
1.
0 page 1 2011-11-29 IPG16N10S4-61 Parameter Symbol Conditions Thermal characteristics1) Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area2) min.
Values typ.
Unit max.
- - 5.
2 K/W - 100 - 60 - Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0V, I D=1mA V GS(th) V DS=V GS, I D=9µA 100 - -V 2.
0 2.
8 3.
5 Zero gate voltage drain current4) I DSS V DS=100V, V GS=0V, T j=25°C - 0.
01 1 µA Gate-source leakage current3) Drain-source on-state resistance3) V DS=100V, V GS=0V, T j=125°C2) I GSS V GS=20V, V DS=0V R DS(on) V GS=10V, I D=16A - - 1 100 - 100 nA 53 61 mW Rev.
1.
0 page 2 2011-11-29 IPG16N10S4-61 Parameter Dynamic characteristics1) Input capacitance3) Output capacitance3) Reverse transfer capacitance3) Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics1, 3) Gate to source charge Gate to drain charge Gate charge total Gate plateau volt...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)