400V N-Channel MOSFET
Description
HFS730
Dec 2005
HFS730
400V N-Channel MOSFET
BVDSS = 400 V RDS(on) typ = 0.8 Ω ID = 5.5 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 18 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0...
Similar Datasheet