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HFI640
200V N-Channel MOSFET
Description
HFW640 / HFI640 Mar 2008 HFW640 / HFI640 200V N-Channel MOSFET BVDSS = 200 V RDS(on) typ = 0.145Ω ID = 18 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 37 nC (Typ.) Extended Safe Operating Area ...
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