N-Channel MOSFET
Description
HFD1N65S / HFU1N65S
HFD1N65S / HFU1N65S
650V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 3.0 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 10.5 Ω (Typ.) @VGS=10V
April 2...
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