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HFH9N90

N-Channel MOSFET

Description

HFH9N90 Apr 2009 HFH9N90 900V N-Channel MOSFET BVDSS = 900 V RDS(on) typ = 1.12 Ω ID = 9.0 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 55 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) ...

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