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C3326
2SC3326
Description
TOSHIBA
Transistor
Silicon
NPN
Epitaxial Type (PCT process) 2SC3326 For Muting and Switching Applications 2SC3326 Unit: mm AEC-Q101 Qualified (Note1). High emitter-base voltage: VEBO = 25 V High reverse hFE: Reverse hFE = 150 (typ.) (VCE = −2 V, IC = −4 mA) Low on resistance: RON = 1 Ω (typ.) (IB = 5 mA) High DC current gain: hFE = 200 to 1200 ...
Toshiba
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