DatasheetsPDF.com

C3671

Part Number	C3671
Manufacturer	Toshiba
Description	2SC3671
Published	Jun 8, 2015
Detailed Description	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3671 Strobe Flash Applications Medium Power Amplifier App...
Datasheet	C3671 PDF File

Overview

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3671 Strobe Flash Applications Medium Power Amplifier Applications 2SC3671 Unit: mm • High DC current gain and excellent hFE linearity : hFE = 140 to 450 (VCE = 2 V, IC = 0.
5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) • Low saturation voltage: VCE (sat) = 1.
0 V (max) (IC = 4 A, IB = 0.
1 A) • High collector power dissipation Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse (Note 1) Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCES VCEO VEBO IC ICP IB...

Similar Datasheet

C3600 2SC3600 - Sanyo
C3605 2SC3605 - Toshiba Semiconductor
C3606 2SC3606 - Toshiba
C3607 2SC3607 - Toshiba
C3611 2SC3611 - Panasonic Semiconductor
C3615 2SC3615 - NEC
C3616 2SC3616 - NEC
C3616 2SC3616 - NEC
C3617 2SC3617 - Renesas
C3619 2SC3619 - Toshiba Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)