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C3673

Toshiba
Part Number C3673
Manufacturer Toshiba
Description 2SC3673
Published Jun 8, 2015
Detailed Description TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3673 Switching Applications Solenoid Drive Applications 2SC3673 Unit: ...
Datasheet PDF File C3673 PDF File

C3673
C3673

Overview
TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3673 Switching Applications Solenoid Drive Applications 2SC3673 Unit: mm • High DC current gain : hFE = 500 (min) (IC = 400 mA) • Low collector-emitter saturation voltage : VCE (sat) = 0.
5 V (max) (IC = 300 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 40 V Emitter-base voltage VEBO 7 V Collector current IC 2 A Base current IB 0.
5 A Collector power dissipation PC 1000 mW JEDEC ― Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEITA TOSHIBA ― 2-7D101A Note1: Using continuously under heavy loads...


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