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2SB1375

GME
Part Number 2SB1375
Manufacturer GME
Description Silicon PNP Transistor
Published Jun 25, 2015
Detailed Description Silicon PNP Triple Diffused Type FEATURES  Low Saturation Voltage:VCE(sat)=-1.5V(max.) (IC/IB=-2A/-0.2A) Pb  High...
Datasheet PDF File 2SB1375 PDF File

2SB1375
2SB1375

Overview
Silicon PNP Triple Diffused Type FEATURES  Low Saturation Voltage:VCE(sat)=-1.
5V(max.
) (IC/IB=-2A/-0.
2A) Pb  High Power Dissipation:PC=25W(TC=25℃) Lead-free  Complements the 2SD2012.
Production specification 2SB1375 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO VEBO IC IB PC Tj,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation Ta=25℃ Tc=25℃ Junction and Storage Temperature -60 V -7 V -3 A -0.
5 A 2.
0 W 25 -55 to +150 ℃ X015 Rev.
A www.
gmesemi.
com 1 Production specification Silicon PNP Triple Diffused Ty...


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