N CHANNEL MOS FIELD EFFECT TRANSISTOR
Description
SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switch mode power supplies.
FEATURES VDSS=800V, ID=4A Drain-Source ON Resistance : RDS(ON)=3.6 @VGS = 1...
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