N-Channel Enhancement Mode Power MOSFET
Description
Pb Free Product
BLM3400
N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The BLM3400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
D G
GENERAL FEATURES
● VDS = 30V,ID = 5.8A RDS(ON) ...
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