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NTMFS4H01NF

ON Semiconductor
Part Number NTMFS4H01NF
Manufacturer ON Semiconductor
Description Power MOSFET
Published Jul 31, 2015
Detailed Description NTMFS4H01NF Power MOSFET 25 V, 334 A, Single N−Channel, SO−8FL Features • Integrated Schottky Diode • Optimized Design...
Datasheet PDF File NTMFS4H01NF PDF File

NTMFS4H01NF
NTMFS4H01NF

Overview
NTMFS4H01NF Power MOSFET 25 V, 334 A, Single N−Channel, SO−8FL Features • Integrated Schottky Diode • Optimized Design to Minimize Conduction and Switching Losses • Optimized Package to Minimize Parasitic Inductances • Optimized material for improved thermal performance • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • High Performance DC-DC Converters • System Voltage Rails • Netcom, Telecom • Servers & Point of Load MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Units Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current RqJA (TA = 25°C, Note 1) VDSS VGS ID 25 ±20 54 V V A Power Dissipation RqJA (TA = 25°C, Note 1) Continuous Drain Current RqJC (TC = 25°C, Note 1) PD 3.
2 W ID 334 A Power Dissipation RqJC (TC = 25°C, Note 1) Pulsed Drain Current (tp = 10 ms) Single Pulse Drain-to-Source Avalanche Energy (Note 1) (IL = 57 Apk, L = 0.
3 mH) PD 125 W IDM 568 A EAS 487 mJ Drain to Source dV/dt dV/dt 7 V/ns Maximum Junction Temperature Storage Temperature Range TJ(max) TSTG 150 −55 to 150 °C °C Lead Temperature Soldering Reflow (SMD TSLD 260 °C Styles Only), Pb-Free Versions (Note 2) Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1.
Values based on copper area of 645 mm2 (or 1 in2) of 2 oz copper thickness and FR4 PCB substrate.
2.
For more information, please refer to our Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
3.
This is the absolute maximum rating.
Parts are 100% UIS tested at TJ = 25°C, VGS = 10 V, IL = 37 A, EAS = 205 mJ.
THERMALCHARACTERISTICS Parameter Symbol Max Units Thermal Resistance, Junction-to-Ambient (Note 1 and 4) Junction-to-Case (Note 1 and 4) RqJA RqJC 38.
9 1.
0 4.
Thermal Resistance RqJA and RqJC as defined in JESD51−3.
°C/W www.
onsemi.
com VGS 4...


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