600V N-Channel MOSFET
Description
FQD3N60C
FQD3N60C
600V N-Channel MOSFET
Features
2.4A, 600V, RDS(on) = 3.4Ω @VGS = 10 V Low gate charge ( typical 10.5 nC) Low Crss ( typical 5 pF) Fast switching 100% avalanche tested Improved dv/dt capability
January 2006
QFET TM
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprie...
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