Dual N-Channel Enhancement Mode Field Effect Transistor
Description
CEM6088L
Dual N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
60V, 9.0A, RDS(ON) = 14.5mΩ @VGS = 10V. RDS(ON) = 18.0mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. Surface mount Package.
D1 D1 D2 D2 876 5
SO-8
1
123 4 S1 G1 S2...
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