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NP110N055PUG

Renesas
Part Number NP110N055PUG
Manufacturer Renesas
Description N-CHANNEL POWER MOS FET
Published Oct 12, 2015
Detailed Description DATA SHEET MOS FIELD EFFECT TRANSISTOR NP110N055PUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP110N055PUG is N...
Datasheet PDF File NP110N055PUG PDF File

NP110N055PUG
NP110N055PUG

Overview
DATA SHEET MOS FIELD EFFECT TRANSISTOR NP110N055PUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP110N055PUG is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION PART NUMBER PACKAGE NP110N055PUG TO-263 (MP-25ZP) FEATURES • Channel temperature 175 degree rating • Super low on-state resistance RDS(on) = 2.
4 mΩ MAX.
(VGS = 10 V, ID = 55 A) • Low Ciss: Ciss = 17100 pF TYP.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 55 Gate to Source Voltage (VDS = 0 V) VGSS ±20 Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 ID(DC) ID(pulse) ±110 ±440 Total Power Dissipation (TA = 25°C) PT1 1.
8 Total Power Dissipation (TC = 25°C) PT2 288 Channel Temperature Tch 175 Storage Temperature Tstg −55 to +175 Repetitive Avalanche Current Note2 IAR 66 Repetitive Avalanche Energy Note2 EAR 435 Notes 1.
PW ≤ 10 µs, Duty Cycle ≤ 1% 2.
Tch ≤ 150°C, VDD = 28 V, RG = 25 Ω, VGS = 20 → 0 V V V A A W W °C °C A mJ (TO-263) THERMAL RESISTANCE Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 0.
52 83.
3 °C/W °C/W The information in this document is subject to change without notice.
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Document No.
D16853EJ1V0DS00 (1st edition) Date Published September 2004 NS CP(K) Printed in Japan 2004 NP110N055PUG ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS Zero Gate Voltage Drain Current IDSS VDS = 55 V, VGS = 0 V Gate Leakage Current Gate to Source Threshold Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Note IGSS VGS(th) | yfs | RDS(on) VGS = ±20 V, VDS = 0 V VDS = VGS, ID = 250 µA VDS = 10 V, ID = 55 A VGS = 10 V, ID =...


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