N-Channel QFET MOSFET
Description
FQA8N90C_F109 — N-Channel QFET® MOSFET
FQA8N90C_F109
N-Channel QFET® MOSFET
900 V, 8 A, 1.9 Ω Features
8 A, 900 V, RDS(on) = 1.9 Ω (Max.) @ VGS = 10 V, ID = 4 V Low Gate Charge (Typ. 35 nC)
Low Crss (Typ. 12 pF)
100% Avalanche Tested
RoHS Compliant
May 2014
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semic...
Similar Datasheet