16V P-Channel Enhancement-Mode MOSFET
Description
LESHAN RADIO COMPANY, LTD.
16V P-Channel Enhancement-Mode MOSFET
VDS= -16V RDS(ON), Vgs@-4.5V, Ids@-4.7A = 60 mΩ RDS(ON), Vgs@-2.5V, Ids@-1.0A = 100 mΩ Features
Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance
▼ Simple Drive Requirement ▼ Small Package Outline ▼ Surface Mount Device
LP2307LT1G
3
1 2
SOT– 23 (TO–236AB)...
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