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TC58BVG0S3HBAI4

Part Number	TC58BVG0S3HBAI4
Manufacturer	Toshiba
Description	1 GBIT (128M x 8 BIT) CMOS NAND E2PROM
Published	Oct 19, 2015
Detailed Description	TC58BVG0S3HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 GBIT (128M × 8 BIT) CMOS NAND E2PROM DESCRIP...
Datasheet	TC58BVG0S3HBAI4 PDF File

Overview

TC58BVG0S3HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 GBIT (128M × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58BVG0S3HBAI4 is a single 3.
3V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.
The device has a 2112-byte static register which allows program and read data to be transferred between the register and the memory cell array in 2112-bytes increments.
The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes × 64 pages).
The TC58BVG0S3HBAI4 is a serial-type memory device which utilizes the I/O pins for both address and data...

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