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IXGH40N60C

IXYS
Part Number IXGH40N60C
Manufacturer IXYS
Description IGBT
Published Oct 27, 2015
Detailed Description HiPerFASTTM IGBT LightspeedTM Series Preliminary Data IXGH 40N60C IXGT 40N60C V CES IC25 VCE(sat) tfi typ = 600 V = 7...
Datasheet PDF File IXGH40N60C PDF File

IXGH40N60C
IXGH40N60C


Overview
HiPerFASTTM IGBT LightspeedTM Series Preliminary Data IXGH 40N60C IXGT 40N60C V CES IC25 VCE(sat) tfi typ = 600 V = 75 A = 2.
5 V = 75 ns Symbol Test Conditions VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE= 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load PC TC = 25°C TJ TJM Tstg Maximum lead temperature for soldering 1.
6 mm (0.
062 in.
) from case for 10 s Md Weight Mounting torque (M3) Maximum Ratings 600 V 600 V ±20 V ±30 V 75 A 40 A 150 A ICM = 80 @ 0.
8 VCES 250 A W -55 .
.
.
+150 150 -55 .
.
.
+150 °C °C °C 300 °C 1.
13/10 Nm/lb.
in.
TO-247 AD 6 TO-268 SMD 4 g g Symbol BVCES VGE(th) ICES IGES VCE(sat) Test Conditions IC = 250 µA, VGE = 0 V IC = 250 µA, VCE = VGE VCE = 0.
8 • VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = IC110, VGE = 15 V Characteristic Values (TJ = 25°C, unless otherwise specified) min.
typ.
max.
600 V TJ = 25°C TJ = 150°C 2.
5 5 V 200 µA 1 mA ±100 nA 2.
1 2.
5 V TO-268 (IXGT) G E C (TAB) TO-247 AD (IXGH) G CE C (TAB) G = Gate, E = Emitter, C = Collector, TAB = Collector Features z International standard packages JEDEC TO-247 and surface mountable TO-268 z High current handling capability z Latest generation HDMOSTM process z MOS Gate turn-on - drive simplicity Applications z PFC circuits z Uninterruptible power supplies (UPS) z Switched-mode and resonant-mode power supplies z AC motor speed control z DC servo and robot drives z DC choppers Advantages z High power density z Very fast switching speeds for high frequency applications © 2003 IXYS All rights reserved DS98802A(01/03) Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.
typ.
max.
gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK IC = IC110; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % VCE = 25 V, VGE = 0 V, f = 1 MHz IC = IC110, VGE = 15 V, VC...



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