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IPB014N06N

Infineon Technologies
Part Number IPB014N06N
Manufacturer Infineon Technologies
Description Power Transistor
Published Nov 14, 2015
Detailed Description Type OptiMOSTM Power-Transistor Features • Optimized for synchronous rectification • 100% avalanche tested • Superior t...
Datasheet PDF File IPB014N06N PDF File

IPB014N06N
IPB014N06N

Overview
Type OptiMOSTM Power-Transistor Features • Optimized for synchronous rectification • 100% avalanche tested • Superior thermal resistance • N-channel, normal level • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Product Summary VDS RDS(on),max ID QOSS QG(0V.
.
10V) IPB014N06N 60 V 1.
4 mW 180 A 119 nC 106 nC Type IPB014N06N Package TO263-7 Marking 014N06N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current I D V GS=10 V, T C=25 °C V GS=10 V,T C=100 °C 180 A 180 V GS=10 V, T C=25 °C, R thJA =50K/W 34 Pulsed drain curren...


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