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HY57V561620FLT-H

Part Number	HY57V561620FLT-H
Manufacturer	Hynix Semiconductor
Description	256M (16M x 16bit) Hynix SDRAM Memory
Published	Nov 27, 2015
Detailed Description	256Mb Synchronous DRAM based on 4M x 4Bank x16 I/O 256M (16Mx16bit) Hynix SDRAM Memory Memory Cell Array - Organized as ...
Datasheet	HY57V561620FLT-H PDF File

Overview

256Mb Synchronous DRAM based on 4M x 4Bank x16 I/O 256M (16Mx16bit) Hynix SDRAM Memory Memory Cell Array - Organized as 4banks of 4,194,304 x 16 This document is a general product description and is subject to change without notice.
Hynix does not assume any responsibility for use of circuits described.
No patent licenses are implied.
Rev 1.
2 / Dec.
2009 1 111 Synchronous DRAM Memory 256Mbit HY57V561620F(L)T(P) Series Document Title 256Mbit (16M x16) Synchronous DRAM Revision History Revision No.
0.
1 0.
2 0.
3 History Initial Draft Define : Current value (Page 11 ~ 12) 1.
Cerrect : 1-1.
4Banks x 2Mbits x32 --> 4Banks x 4Mbits x16(Ordering information; Page 06).
1-2.
VDDQ / VSSQ : Powe...

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