Silicon PNP Power Transistors
Description
isc Silicon PNP Power Transistors
DESCRIPTION ·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage-
V(BR)CEO= -160V(Min) ·Complement to Type 2SC3298 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power amplifier applications. ·Driver stage amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25...
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