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Si6465DQ

Vishay
Part Number Si6465DQ
Manufacturer Vishay
Description P-Channel MOSFET
Published Jan 6, 2016
Detailed Description P-Channel 1.8-V (G-S) MOSFET Si6465DQ Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.012 at VGS = - 4.5 V ...
Datasheet PDF File Si6465DQ PDF File

Si6465DQ
Si6465DQ

Overview
P-Channel 1.
8-V (G-S) MOSFET Si6465DQ Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.
012 at VGS = - 4.
5 V - 8 0.
017 at VGS = - 2.
5 V 0.
025 at VGS = - 1.
8 V ID (A) ± 8.
8 ± 7.
4 ± 6.
0 FEATURES • Halogen-free • TrenchFET® Power MOSFETs: 1.
8 V Rated RoHS COMPLIANT S* D1 S2 S3 G4 TSSOP-8 Si6465DQ Top View 8D 7S 6S 5D Ordering Information: Si6465DQ-T1-GE3 (Lead (Pb)-free and Halogen-free) G * Source Pins 2, 3, 6 and 7 must be tied common D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C)a, b TA = 25 °C TA = 70 °C ID Pulsed Drain Current IDM Continuous Source Current (Diode Conduction)a, b IS Maximum Power Dissipationa, b TA = 25 °C TA = 70 °C PD Operating Junction and Storage Temperature Range TJ, Tstg Limit -8 ±8 ± 8.
8 ± 7.
1 ± 30 - 1.
5 1.
5 1.
0 - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Ju...


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