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IXFH26N55Q

IXYS
Part Number IXFH26N55Q
Manufacturer IXYS
Description Power MOSFETs
Published Jan 8, 2016
Detailed Description Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class IXFH 26N55Q IXFT 26N55Q N-Channel Enhancement Mode Av...
Datasheet PDF File IXFH26N55Q PDF File

IXFH26N55Q
IXFH26N55Q

Overview
Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class IXFH 26N55Q IXFT 26N55Q N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt VDSS ID25 RDS(on) = 550 V = 26 A = 0.
23 Ω trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Symbol VDSS VGS(th) IGSS IDSS RDS(on) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C 1.
6 mm (0.
063 in) from case for 10 s Mounting torque TO-247 TO-268 Maximum Ratings 550 V 550 V ±30 V ±40 V 26 A 104 A 26 A 50 mJ 2.
0 J 20 V/...


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