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FDJ127P

P-Channel -1.8 Vgs Specified PowerTrench MOSFET

Description

FDJ127P July 2004 FDJ127P P-Channel -1.8 Vgs Specified PowerTrench MOSFET General Description This P-Channel -1.8V specified MOSFET uses Fairchild’s advanced low voltage Power Trench process. It has been optimized for battery power management applications. Applications Battery management Load switch Features –4.1 A, –20 V. RDS(ON) = 60 mΩ @ VGS ...

Fairchild Semiconductor

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