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BLF10M6135

NXP
Part Number BLF10M6135
Manufacturer NXP
Description Power LDMOS transistor
Published Jan 27, 2016
Detailed Description BLF10M6135; BLF10M6LS135 Power LDMOS transistor Rev. 1 — 24 June 2014 Product data sheet 1. Product profile 1.1 Gene...
Datasheet PDF File BLF10M6135 PDF File

BLF10M6135
BLF10M6135

Overview
BLF10M6135; BLF10M6LS135 Power LDMOS transistor Rev.
1 — 24 June 2014 Product data sheet 1.
Product profile 1.
1 General description 135 W LDMOS power transistor for industrial applications at frequencies from 700 MHz to 1000 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit.
Test signal f VDS PL(AV) Gp D (MHz) (V) (W) (dB) (%) 2-carrier W-CDMA 869 to 894 28 26.
5 21.
0 28.
0 ACPR (dBc) 39[1] [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.
5 dB at 0.
01 % probability on CCDF per carrier; carrier spacing 5 MHz.
1.
2 Features and benefits  Easy power control  Integrated ESD protection  Enhanced ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (700 MHz to 1000 MHz)  Internally matched for ease of use  Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS) 1.
3 Applications  RF power amplifiers for ISM applications in the 7...


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