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1SV229

Toshiba Semiconductor

Variable Capacitance Diode


Description
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV229 1SV229 VCO for UHF Band Radio Ultra low series resistance: rs = 0.2 Ω (typ.) Useful for small size set Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage Junction temperature Storage temperature range VR 15 V Tj 125 °C Tstg −55~125 °...



Toshiba Semiconductor

1SV229

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