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1SV239

Toshiba Semiconductor

Variable Capacitance Diode


Description
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV239 1SV239 VCO for UHF Radio Ultra low series resistance: rs = 0.44 Ω (typ.) Useful for small size set Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage Junction temperature Storage temperature range VR 15 V Tj 125 °C Tstg −55~125 °C N...



Toshiba Semiconductor

1SV239

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