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1SV284

Toshiba Semiconductor
Part Number 1SV284
Manufacturer Toshiba Semiconductor
Description Variable Capacitance Diode
Published Mar 23, 2005
Detailed Description TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV284 VCO for V/UHF Band Radio · High capacitance rat...
Datasheet PDF File 1SV284 PDF File

1SV284
1SV284

Overview
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV284 VCO for V/UHF Band Radio · High capacitance ratio: C1 V/C4 V = 2.
0 (typ.
) · Low series resistance: rs = 0.
22 Ω (typ.
) · Useful for small size tuner.
Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 125 -55~125 Unit V °C °C 1SV284 Unit: mm Electrical Characteristics (Ta = 25°C) Characteristics Reverse voltage Reverse current Capacitance Capacitance Capacitance ratio Series resistance Symbol Test Condition VR IR C1 V C4 V C1 V/C4 V rs IR = 1 mA VR = 10 V VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz ¾ VR = 1 V, f = 470 MHz Marking...


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