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1SV285

Toshiba Semiconductor
Part Number 1SV285
Manufacturer Toshiba Semiconductor
Description Variable Capacitance Diode
Published Mar 23, 2005
Detailed Description TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV285 1SV285 VCO for UHF Band Radio • High capacita...
Datasheet PDF File 1SV285 PDF File

1SV285
1SV285

Overview
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV285 1SV285 VCO for UHF Band Radio • High capacitance ratio: C1 V/C4 V = 2.
3 (typ.
) • Low series resistance: rs = 0.
42 Ω (typ.
) • Useful for small size tuner.
Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage Junction temperature Storage temperature range VR 10 V Tj 125 °C Tstg −55~125 °C Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/vol...


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