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1SV286

Toshiba Semiconductor
Part Number 1SV286
Manufacturer Toshiba Semiconductor
Description Variable Capacitance Diode
Published Mar 23, 2005
Detailed Description TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV286 CATV Converter 1’st OSC Tuning · High capacitan...
Datasheet PDF File 1SV286 PDF File

1SV286
1SV286

Overview
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV286 CATV Converter 1’st OSC Tuning · High capacitance ratio: C2 V/C20 V = 8.
9 (typ.
) · Low series resistance: rs = 0.
73 Ω (typ.
) · Useful for small size tuner.
Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Peak reverse voltage Junction temperature Storage temperature range Symbol VR VRM Tj Tstg Rating 30 35 (RL = 10 kW) 125 -55~125 Unit V V °C °C 1SV286 Unit: mm Electrical Characteristics (Ta = 25°C) Characteristics Reverse voltage Reverse current Capacitance Capacitance Capacitance ratio Series resistance Symbol Test Condition VR IR C2 V C20 V C2 V/C20 V rs IR = 1 mA VR = 28 V VR = 2 V, f = 1 MHz VR = 20 V, f = 1 MHz ¾ VR = 5 V, f = 470 MHz Marking JEDEC ― JEITA ― TOSHIBA 1-1G1A Weight: 0.
0014 g (typ.
) Min Typ.
Max Unit 30 ¾ ¾ ¾ ¾ 10 14.
5 ¾ 16.
1 1.
56 ¾ 1.
86 7.
8 8.
9 ¾ ¾ 0.
73 0.
9 V nA pF pF ¾ W 1 2003-04-02 1SV286 CAPACITANCE CHANGE RATIO @C (%) (Note) Note: dC = C (Ta) - C ...


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